| 离子束溅射制备Si／Ge多层膜研究 |
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| 引用本文： | 刘焕林,郝瑞亭,陈刚,杨宇.离子束溅射制备Si／Ge多层膜研究[J].中国材料科技与设备,2006,3(2):55-57. |
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| 作者姓名： | 刘焕林 郝瑞亭 陈刚 杨宇 |
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| 作者单位： | [1]云南大学材料科学与工程系,云南昆明650091 [2]中国科学院半导体研究所,北京100083 |
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| 基金项目： | 云南省自然科学基金资助项目（2002E0009M） |
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| 摘 要： | 采用离子束溅射方法在Si衬底上制备Si／Ge多层膜，通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品；通过X射线衍射、Raman散射等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。
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| 关 键 词： | Si／Ge多层膜 离子束溅射 红外探测材料 |
Research of Si/Ge Multilayer Films by Ion Beam Sputtering |
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| LIU Huan - lin, HAO Rui - ting, CHEN Gang, YANG Yu.Research of Si/Ge Multilayer Films by Ion Beam Sputtering[J].Chinese Materials Science Technology & Equipment,2006,3(2):55-57. |
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| Authors: | LIU Huan - lin HAO Rui - ting CHEN Gang YANG Yu |
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| Affiliation: | 1. Materials Science and Engineering Department, Yunnan University, Yunnan, Kunming, 650091, China; 2. Institute of Semiconductors , China Academy of Science, Beijing, I00083, China |
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| Abstract: | Ion beam sputtering were used to prepare Si/Ge muhilayer films on Si substrates. By changing the temperature of preparation, the speed of sputtering, a series of Si/Ge muhilayer films sample were prepared. The relationship between thin films structure and preparation parameters were studied by X - ray diffraction, Raman scattering. Si/Ge muhilayer films with clear interface and intact period were prepared. |
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| Keywords: | Si/Ge Muhilayer films Ion beam sputtering Infrared detecting materials |
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