| Bi2O3-B2O3掺杂对BaAl2Si2O8陶瓷结构及微波介电性能的影响 |
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| 引用本文： | 黄龙,丁士华,严欣堪,宋天秀,张云.Bi2O3-B2O3掺杂对BaAl2Si2O8陶瓷结构及微波介电性能的影响[J].中国陶瓷,2019(6):1-6. |
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| 作者姓名： | 黄龙 丁士华 严欣堪 宋天秀 张云 |
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| 作者单位： | 西华大学材料科学与工程学院 |
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| 基金项目： | 教育部春晖计划项目(Z2011077);国家自然科学基金(11074203);四川省特种材料及制备技术重点实验室开放课题资助项目(szjj2017-059);四川省教育厅资助项目(14ZB0126);四川省粉末冶金工程技术中心资助项目(SCFMYJ2017-04,SC-FMYJ2017-07);西华大学研究生创新基金(ycjj2018012,ycjj2018013) |
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| 摘 要： | 采用固相反应法制备BaAl2Si2O8-x wt%Bi2O3-B2O3(x=0,1,2,3,4)陶瓷。探究了添加不同量的Bi2O3-B2O3(BiB)烧结助剂对BaAl2Si2O8(BAS)陶瓷的烧结温度、结构及微波介电性能的影响。结果表明:添加1 wt%的BiB烧结助剂可促进BAS晶体结构由六方相全部转变为单斜相,并且BiB烧结助剂添加量在1~4 wt%范围内,均为单一单斜相。添加3 wt%的Bi B烧结助剂可使BAS陶瓷烧结密度增加到最大值,并能将烧结温度由1400℃降低至1250℃。在x=3,烧结温度为1250℃时,BAS陶瓷的介电常数和品质因数均达到最大值,并且谐振频率温度系数的绝对值也显著减小,其介电性能为:εr=6.2,Q·f=21 972 GHz,τf=-17.06×10^-6℃^-1。
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| 关 键 词： | 钡长石 烧结助剂 晶体结构 介电性能 |
Effect of Bi2O3-B2O3 Doping on Structure and Microwave Dielectric Properties of BaAl2Si2O8 Ceramics |
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| HUANG Long,DING Shihua,YAN Xinkan,SONG Tianxiu,ZHANG Yun.Effect of Bi2O3-B2O3 Doping on Structure and Microwave Dielectric Properties of BaAl2Si2O8 Ceramics[J].China Ceramics,2019(6):1-6. |
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| Authors: | HUANG Long DING Shihua YAN Xinkan SONG Tianxiu ZHANG Yun |
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| Affiliation: | (School of Materials Science and Engineering,Xihua University,Chengdu 610039,China}) |
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| Abstract: | The BaAl2Si2O8-x wt%Bi2O3-B2O3 (x =0,1,2,3,4) ceramics w ere prepared by solid state sintering. The sintering tem perature, structure and microw ave dielectric properties of BaAl2Si2O 8 (BAS) with different content of Bi2O3-B2O3 (BiB) sintering additives were investigated. The results show that the 1 wt% BiB sintering additives can prom ote the transform ation from hexacelsian to celsian and the second phase does not appear as 1≤x≤4.The 3 wt% BiB sintering additives can also increase the bulk density to the maximum value and reduce th e sintering temperature from 1400℃ to 1250℃.The BAS with the 3 wt% BiB sintering additives sintered at 1250℃ shows the good Q·f of 21 972 GHz,εr of 6 .2 and τf of -17.06×10^-6℃^-1. |
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| Keywords: | Barium feld sp ar Sintering additives Crystal structure Dielectric properties |
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