Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后

Study on AMR Properties of Ni_(65)Co_(35) Thin Films

Chosing Ni_(65)Co_(35) as target matema1s,thin films were prepared by RF magnetron system. Thr0ugh the measurement of MR ratio by four-point-probe method, MR properties as function of certain sputtering parameters, such as Ar pressure,bias voltage, sputtering power and substrate temperature were systematicaly studied and the mechanism was ana1yzed. We find that the MR ratio of the film depends greatly on sputtering parameters, and a significant increase in MR ratio can be achieved with a thermal activation energgy of 1. 15 eV.