Polystyrene as a zwitter resist in electron beam lithography based electroless patterning of gold |
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Authors: | T Bhuvana G U Kulkarni |
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Affiliation: | (1) Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, 560 064, India |
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Abstract: | The resist action of polystyrene (M
w, 2,600,000) towards electroless deposition of gold on Si(100) surface following cross-linking by exposing to a 10 kV electron
beam, has been investigated employing a scanning electron microscope equipped with electron beam lithography tool. With a
low dose of electrons (21 μC/cm2), the exposed regions inhibited the metal deposition from the plating solution due to cross-linking—typical of the negative
resist behaviour of polystyrene, with metal depositing only on the developed Si surface. Upon increased electron dosage (160
μC/cm2), however, Au deposition took place even in the exposed regions of the resist, thus turning it into a positive resist. Raman
measurement revealed amorphous carbon present in the exposed region that promotes metal deposition. Further increase in dosage
led successively to negative (220 μC/cm2) and positive (13,500 μC/cm2) resist states. The zwitter action of polystyrene resist has been exploited to create line gratings with pitch as low as
200 nm and gap electrodes down to 80 nm. |
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Keywords: | Electron resist electroless deposition gold patterning |
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