氧化钨薄膜对发光二极管特性的影响研究

氧化钨薄膜具有适中的光学带隙、折射率及高功函数等半导体特性,本文采用溅射法(Sput-tering)制备氧化钨薄膜测试其光电特性,使用AFM、XRD观察薄膜外观结构与晶体状态,应用XPS、UPS表征薄膜的化学计量组分及薄膜功函数,并将此薄膜应用于AlGaInP发光二极管器件中,以增加与p-GaP欧姆接触特性,增加载流子...

Research on the influence of WO3film on the characteristics of light-emitting diodes

The WO_3film has moderate optical band gap,refractive index and high work function and other semiconductor characteristics.In this paper,sputtering is used to prepare the WO_3film to test its optical and electrical properties , and the appearance structure and crystal state of the film are observed using AF M and XRD.XPS and UPS characterize the stoichiometric composition and work funct ion of the film,and apply WO_3film to AlGaInP light-emitting diode devices to i ncrease the ohmic contact characteristics with p-GaP and increase the carrier i n jection efficiency;the test results show that:The composite film formed by the thick WO_3film dummy layer and ITO can effectively increase the electron inje ct ion efficiency,increase the light intensity of the AlGaInP light-emitting diod e by 4%,and reduce the forward voltage by 0.01V.