Thermal stability and radiation resistance of tin valent states in the structure of the (As2Se3)1 ? z (SnSe) z ? x (GeSe) x semiconductor glasses

The ratio between the content of bivalent and tetravalent tin atoms in the (As₂Se₃)_{1 − z} (SnSe) _{z − x} (GeSe) _x glasses depends on the rate of quenching of the alloy and on its temperature. Irradiation of these glasses with γ-ray photons brings about a partial oxidation of bivalent tin with formation of amorphous (finely divided) SnO₂ phase blocked by the glass, so that the physicochemical properties of the glasses (density, microhardness, glassformation temperature, and the electrical-conductivity activation energy) are virtually unaffected by irradiation. Original Russian Text ? G.A. Bordovskii, R.A. Kastro, A.V. Marchenko, S.A. Nemov, P.P. Seregin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 12, pp. 1429–1433.