首页 | 本学科首页   官方微博 | 高级检索  
     

量子阱间耦合对带结构的影响
引用本文:陈杰,曾维友.量子阱间耦合对带结构的影响[J].半导体学报,2015,36(10):102005-4.
作者姓名:陈杰  曾维友
摘    要:用Matlab程序语言数值计算了多量子阱结构的能级,并研究了量子阱间耦合对其带结构的影响。多量子阱模型是在一个一维有限深势阱(阱边势垒高为 V0)中插入等高(Vb)等厚(b)的势垒方式建成,被分割而成的多量子阱厚度为w。通过增加插入壁垒的个数N、改变阱垒厚度比w/b 及势垒高度比V0/Vb,分别近似计算了对应的结构的能级及波函数。计算结果显示,量子阱间耦合受上述参数的强烈影响,改变参数N,w/b 或V0/Vb ,能带和带隙的宽度是可以被调节的。研究说明,量子阱的能带及带隙宽度达到期望值是完全有可能实现的。

关 键 词:coupling  quantum  wells  band  structure

Coupling effect of quantum wells on band structure
Chen Jie and Zeng Weiyou.Coupling effect of quantum wells on band structure[J].Chinese Journal of Semiconductors,2015,36(10):102005-4.
Authors:Chen Jie and Zeng Weiyou
Affiliation:School of Science, Hubei University of Automotive Technology, Shiyan 442002, China
Abstract:The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language.In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0.Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells.When these variables change, the width of the energy bands and gaps can be tuned.Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps.
Keywords:coupling  quantum wells  band structure
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号