| 利用MoO3为电极修饰层的F16CuPc/ CuPc异质结的双极性有机场效应晶体管 |
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| 引用本文： | 仪明东,张宁,解令海,黄维.利用MoO3为电极修饰层的F16CuPc/ CuPc异质结的双极性有机场效应晶体管[J].半导体学报,2015,36(10):104001-6. |
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| 作者姓名： | 仪明东 张宁 解令海 黄维 |
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| 摘 要： | 在本文中，我们利用钛青铜(CuPc)和氟化钛青铜(F16CuPc)作为空穴传输层和电子传输层的制备了具有异质结结构的有机场效应晶体管(OFETs)。与单层的F16CuPc晶体管相比，异质结结构的晶体管的电子迁移率从3.1×10-3cm2/Vs提高至8.7×10-3cm2/vs,然而，空穴的传输行为却没有被观测到。为了提高空穴的注入能力，我们利用MoO3对源-漏电极进行了修饰，有效地改善了空穴注入。并进一步证实了MoO3的引入使得器件的接触电阻变小，平衡了电子和空穴的注入，从而最终实现了器件的双极性传输。
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| 关 键 词： | organic field-effect transistors heterojunction ambipolar contact resistance |
| 收稿时间： | 4/9/2015 12:00:00 AM |
| 修稿时间： | 6/4/2015 12:00:00 AM |
Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer |
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| Yi Mingdong,Zhang Ning,Xie Linghai and Huang Wei.Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J].Chinese Journal of Semiconductors,2015,36(10):104001-6. |
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| Authors: | Yi Mingdong Zhang Ning Xie Linghai and Huang Wei |
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| Affiliation: | 1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China;2. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China;Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China |
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| Abstract: | We fabricated heterojunction organic field-effect transistors (OFETs) using copper phthalocyanine (CuPc) and hexadecafluorophtholocyaninatocopper (F16CuPc) as hole transport layer and electron transport layer, respectively.Compared with F16CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1×10-3 to 8.7×10-3 cm2/(V·s), but the p-type behavior was not observed.To enhanced the hole injection, we modified the source-drain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved.Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5×10-3 and 3.1×10-3 cm2/(V·s), respectively. |
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| Keywords: | organic field-effect transistors heterojunction ambipolar contact resistance |
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