Ion beam induced mixing at Co/Si interface |
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| Authors: | Garima Agarwal Pratibha Sharma Chhagan Lal I.P. Jain |
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| Affiliation: | a Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004, India
b Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, India |
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| Abstract: | Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au+9 ion irradiation at different fluences, varying from 1012 to 1014 ions/cm2. Mixing was investigated by Rutherford Backscattering Spectroscopy (RBS) as a function of ion fluence and its mechanism across the interface is explained by the thermal spike model. |
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| Keywords: | Interface Silicide Ion beam mixing Electronic excitation RBS |
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