高迁移率ZnO纳米线的太赫兹探测器应用

报道了一种使用氧化物纳米线(ZnO)构建的新型太赫兹探测器。首先合成了高品质的ZnO纳米线,并且以此制备了场效应管。通过电输运测量得出ZnO纳米线具有高的开关比和良好的场效应迁移率,因此ZnO纳米线可作为基于一维场效应管模型的太赫兹探测器的感应端。在室温下不同强度的入射太赫兹波(0.3 THz)都可引起光电压。此外,进一步的分析证明太赫兹波的光敏效应是由于ZnO样品自身的高迁移率引起的,这也说明了氧化物纳米电子学将在太赫兹领域得到更广阔的应用。

High mobility ZnO nanowires for terahertz detection applications

An oxide nanowire material(ZnO) is utilized for terahertz detection purpose. High quality ZnO nanowires are synthesized and Field Effect Transistors(FETs) are fabricated. Electrical transport measurements demonstrate high on/off ratio, and fairly good field effect mobility. It is shown that ZnO nanowires can be used as building blocks for the implementation of terahertz detectors based on a one-dimensional FET configuration. Clear terahertz wave(0.3 THz) induced photovoltage at 0.3 THz is obtained at room temperature with varied signal incidence intensities. In addition, further analysis indicates that the terahertz photoresponse is closely related to the high mobility in the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.