| 管式电炉合成氮化镓晶粒的研究 |
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| 引用本文： | 黄萍,薛成山,李秀琴,魏琴琴. 管式电炉合成氮化镓晶粒的研究[J]. 微纳电子技术, 2003, 40(11): 27-29 |
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| 作者姓名： | 黄萍 薛成山 李秀琴 魏琴琴 |
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| 作者单位： | 山东师范大学物理系,半导体所,山东,济南,250014 |
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| 摘 要： | 以Ga2O3为Ga源,氨气(NH3)为N源,通过氮化反应合成了高质量的GaN晶粒。用XRD,FTIR和TEM对生成产物的组分、结构进行了研究。结果表明,用管式电炉合成的GaN为多晶体,属六方晶系。
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| 关 键 词： | 氮化镓 Ga_2O_3 氨气 |
| 文章编号： | 1671-4776(2003)10-0027-03 |
| 修稿时间： | 2003-04-02 |
Study of GaN crystalline fabricated in the electronic tube furnace |
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| HUANG Ping,XUE Cheng-shan,LI Xiu-qin,WEI Qin-qin. Study of GaN crystalline fabricated in the electronic tube furnace[J]. Micronanoelectronic Technology, 2003, 40(11): 27-29 |
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| Authors: | HUANG Ping XUE Cheng-shan LI Xiu-qin WEI Qin-qin |
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| Abstract: | GaN crystal particles have been fabricated by nitriding Ga 2 O 3 in the tube furnace.The samples were characterized by XRD,FTIR and TEM.The results reveal that the formed GaN crystals are polycrystalline GaN with hexagonal phase. |
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| Keywords: | GaN Ga_2O_3 NH_3 |
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