| Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method |
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| 引用本文： | 姚若河,张晓东.Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method[J].等离子体科学和技术,2002,4(3):1319-1322. |
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| 作者姓名： | 姚若河 张晓东 |
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| 作者单位： | [1]InstituteofPlasmaPhysics,ChineseAcademyofSciences,Hefei230031,China [2]DepartmentofAppliedPhysics,SouthChinaUniversityofTechnology,Guangzhou510640,China |
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| 基金项目： | This work was supported by the Guangdong Provincial Natural Science Foundation of China No.990781. |
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| 摘 要： | A solid phase crystallizing method been developed to grow a Si crystal at temperatures as low as 550℃.Using this method,a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained.The largest grain size,examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples,is approximately 1μm for substrate temperature at 300℃ and annealed at 550℃ for 3 hours.
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| 关 键 词： | 多结晶硅薄膜 固相结晶法 微电子材料 |
Preparation of High-Quality Poly-Si Films by a Solid Phase Crystallizing Method |
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| Abstract: | A solid phase crystallizing method has been developed to grow a Si crystal at tem peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 μm for substrate temperature at 300 ℃ and annealed at 550 ℃ for 3 hours. |
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