Fabrication of double sided buried contact (DSBC) silicon solar cell by simultaneous pre-deposition and diffusion of boron and phosphorus

Double Sided Buried Contact (DSBC) silicon solar cells have recently been developed at the University of New South Wales. The processing sequence requires three high temperature steps. These three high temperature steps have been reduced to two by simultaneous pre-deposition and diffusion of boron and phosphorus using the spin-on sources. The preliminary results of DSBC cells fabricated by fewer (two) high temperature steps have demonstrated energy conversion efficiency close to 15% for planar substrates. This efficiency should translate into efficiency in excess of 17% with the inclusion of surface texturing.