Dynamic interface velocity for junction characterization |
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| Authors: | J. Farah B. Azar A. Khoury P. Mialhe P. Blaise |
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| Affiliation: | aLaboratoire de Physique de Semiconducteurs et Energétique, Faculté des Sciences Fanar, B.P. 90656, Jdeidet, Lebanon;bCentre d'Etudes Fondamentales, Université de Perpignan, Avenue de Villeuneuve, 66860 Perpignan, Cedex, France |
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| Abstract: | A dynamic velocity at the n-p junction interface has been introduced. Solar cell structures have been used as diode models. The relationship of the dynamic velocity with the technological parameters of solar cells and with the junction operating conditions has been considered. The variations of this dynamic velocity with the potential at the junction point out the influence of the base doping level and of the base width, and allow to differentiate the nature of the cell back contact. |
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| Keywords: | Interfaces Semiconductor junctions Silicon compounds |
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