Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric |
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| Authors: | Sun Jung Kim Byung Jin Cho Ming-Fu Li Shi-Jin Ding Chunxiang Zhu Ming Bin Yu Narayanan B Chin A Dim-Lee Kwong |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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| Abstract: | It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO/sub 2/ dielectrics. A MIM capacitor with capacitance density of 6 fF/spl mu/m/sup 2/ and quadratic VCC of only 14 ppm/V/sup 2/ has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm/sup 2/ up to 4 V at 125 /spl deg/C. |
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