| X射线与半导体探测器相互作用过程的仿真研究 |
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| 引用本文： | 谢利平,何江华,王良厚,邹士亚.X射线与半导体探测器相互作用过程的仿真研究[J].核电子学与探测技术,2005,25(6):849-851. |
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| 作者姓名： | 谢利平 何江华 王良厚 邹士亚 |
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| 作者单位： | 1. 防化研究院第二研究所,北京1044信箱,102205;济南军区装备部防化技术室,250002
2. 防化研究院第二研究所,北京1044信箱,102205 |
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| 摘 要： | 采用MCNP4B仿真了能量为1～100keY的单能X射线与硅半导体探测器发生相互作用的过程。仿真结果表明，当X射线能量较低时，在探测器的硅半导体上沉积能量较低，随着X射线光子能量升高，沉积能量增大，但是在探测器的整个能量段，沉积能量并非线性增加，而是有一定的涨落，经检验，5个探测器在其工作能段范围内探测效率呈正态分布。
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| 关 键 词： | X射线光子 MCNP4B 硅半导体探测器 光电效应 康普顿散射 |
| 文章编号： | 0258-0934(2005)06-0849-03 |
| 修稿时间： | 2005年3月1日 |
Study on MCNP-4B applications to semiconductor detector simulation |
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| XIE Li-ping,HE Jiang-hua,WANG Liang-hou,ZHOU Shi-ya.Study on MCNP-4B applications to semiconductor detector simulation[J].Nuclear Electronics & Detection Technology,2005,25(6):849-851. |
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| Authors: | XIE Li-ping HE Jiang-hua WANG Liang-hou ZHOU Shi-ya |
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| Abstract: | Using MCNP4B simulates the interaction of x-ray photon(1-100keV) and silicon semicon ductor detector. When the energy of X-ray photon is low ,the energy deposit in the silicon semiconduc tor is low. With the increase of the X-ray photon energy, the energy deposit in the silicon increases. But in the full energy segment of the detector the deposit energy is not always increase, and it has fluc tuation. According to results tested, these five detectors obey normal school distribution in their work ing energy segment . |
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| Keywords: | X-ray photon MCNP4B silicon semiconductor detector photoelectricity effect Compton scatter |
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