Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer |
| |
| Ma Zhiyong, Wang Xiaoliang, Hu Guoxin, Xiao Hongling, Wang Cuimei, Ran Junxue, Li Jianping. Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer[J]. Journal of Semiconductors, 2007, In Press. Ma Z Y, Wang X L, Hu G X, Xiao H L, Wang C M, Ran J X, Li J P. Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer[J]. Chin. J. Semicond., 2007, 28(S1): 3944.Export: BibTex EndNote |
| |
| Authors: | Ma Zhiyong Wang Xiaoliang Hu Guoxin Xiao Hongling Wang Cuimei Ran Junxue Li Jianping |
| |
| Affiliation: | Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100084,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100085,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100086,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100087,Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100088 and Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100089 |
| |
| Abstract: | ：A1GaN/AlN/GaN high electron mobility transistor (HEMT) structures with compositionally step-graded AIGaN barrier layer were grown on sapphire substrates by metalorganic chemical vapor deposition.High crystal quality and good sur‘ face morphology of the HEMT structures are confirmed by triple.crystal X-ray diffraction(TCXRD)and atomic force microscopy(AFM)measurements.The full width at half maximum of the GaN(0002)peak iS 4.567 from the rocking curve. AFM measurements reveal a smooth A1GaN surface with a root-mean-square roughness of 0.159nm for a scan area of 5um× 5tLm.Pendell6sung fringes are observed beside AIGaN(0002)diffraction peaks,indicating good crystalline quality and a coherent interface. |
| |
| Keywords: | AIGaN/AlN/GaN Pendell6sung fringes MOCVD HEMT |
|
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
