| Vg=Vd/2)应力模式下宽度变窄对HALO-pMOSFETs退化的影响 |
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| 引用本文： | 胡靖,赵要,许铭真,谭长华.Vg=Vd/2)应力模式下宽度变窄对HALO-pMOSFETs退化的影响[J].半导体学报,2003,24(12):1255-1260. |
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| 作者姓名： | 胡靖 赵要 许铭真 谭长华 |
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| 作者单位： | 北京大学微电子所，北京100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);G2000036503; |
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| 摘 要： | 讨论了最差应力模式下(Vg=Vd/2)宽沟和窄沟器件的退化特性.随着器件沟道宽度降低可以观察到宽度增强的器件退化.不同沟道宽度p MOSFETs的主要退化机制是界面态产生.沟道增强的器件退化是由于沟道宽度增强的碰撞电离率.通过分析电流拥挤效应,阈值电压随沟道宽度的变化,速度饱和区特征长度的变化和HAL O结构串联阻抗这些可能原因,得出沟道宽度增强的热载流子退化是由宽度降低导致器件阈值电压和串联阻抗降低的共同作用引起的.
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| 关 键 词： | 宽度增强退化 尖断电压 电流拥挤效应 |
Influence of Device Narrowing on HALO-pMOSFETs' Degradation Under Vg=Vd/2 Stress Mode |
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| Hu Jing,Zhao Yao,Xu Mingzhen,Tan Changhua.Influence of Device Narrowing on HALO-pMOSFETs'''' Degradation Under Vg=Vd/2 Stress Mode[J].Chinese Journal of Semiconductors,2003,24(12):1255-1260. |
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| Authors: | Hu Jing Zhao Yao Xu Mingzhen Tan Changhua |
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| Abstract: | The degradation characteristics of both wide and narrow devices under V _g= V _d/2 stress mode is investigated.The width-enhanced device degradation can be seen with devices narrowing.The main degradation mechanism is interface state generation for pMOSFETs with different channel width.The cause of the width-enhanced device degradation is attributed to the combination of width-enhanced threshold voltage and series resistance. |
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| Keywords: | width-enhanced degradation pinch-off voltage current-crowding effect |
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