A Two-Chamber Facility for Depositing Thin Films in a Transverse High-Frequency Discharge

A facility for depositing thin films in a transverse high-frequency discharge is described. The facility consists of two (basic and auxiliary) chambers. The basic chamber is intended for sputtering targets and depositing a thin film on the prepared substrate. The auxiliary chamber contains a system of replaceable electrodes and serves for the preliminary processing of a substrate and the subsequent action on the thin film obtained. The device was tested in an oxygen discharge at pressures of 1.0 to 15 hPa and a deposited specific high-frequency power of up to 6.5 W/cm³ at a frequency of 10 MHz with targets of Pb(Zr_xTi_{x– 1})O₃ ferroelectric ceramics and showed satisfactory results.