The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates |
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Authors: | M M Sobolev G E Cirlin Yu B Samsonenko N K Polyakov A A Tonkikh |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | Deep-level transient spectroscopy is used to study charge-carrier emission from the states of separate quantum dots in InAs/GaAs p-n heterostructures grown on (100)-and (311)A-oriented GaAs substrates in relation to the reverse-bias voltage U. It is established that the structures under consideration exhibit different bias-voltage dependences of the Stark shift for the energy levels of the quantum-dot states on the value of U. |
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