Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy |
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| Authors: | N. V. Zotova S. S. Kizhaev S. S. Molchanov T. B. Popova Yu. P. Yakovlev |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | InAs/InAs0.93Sb0.07/InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ=3.45 µm (T=77 K) and λ=3.95 µm (T=300 K) were fabricated. The room-temperature quantum efficiency of light-emitting diodes was 0.12%. |
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