Efficient Light‐Emitting Devices Based on Phosphorescent Polyhedral Oligomeric Silsesquioxane Materials |
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Authors: | Xiaohui Yang Jesse D Froehlich Hyun Sik Chae Sheng Li Amane Mochizuki Ghassan E Jabbour |
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Affiliation: | 1. School of Materials, Advanced Photovoltaics Center and the Flexible Display Center Arizona State University, Tempe, AZ 85287‐6006 (USA);2. Nitto Denko Technical Corporation, 501 Via Del Monte, Oceanside, CA 92058 (USA) |
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Abstract: | Synthesis, photophysical, and electrochemical characterizations of iridium‐complex anchored polyhedral oligomeric silsesquioxane (POSS) macromolecules are reported. Monochromatic organic light‐emitting devices based on these phosphorescent POSS materials show peak external quantum efficiencies in the range of 5–9%, which can be driven at a voltage less than 10 V for a luminance of 1000 cd m?2. The white‐emitting devices with POSS emitters show an external quantum efficiency of 8%, a power efficiency of 8.1 lm W?1, and Commission International de'lÉclairage coordinates of (0.36, 0.39) at 1000 cd m?2. Encouraging efficiency is achieved in the devices based on hole‐transporting and Ir‐complex moieties dual‐functionalized POSS materials without using host materials, demonstrating that triplet‐dye and carrier‐transporting moieties functionalized POSS material is a viable approach for the development of solution‐processable electrophosphorescent devices. |
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Keywords: | electrophosphorescent devices iridium complexes oligomeric silsesquioxane white‐light‐emitting devices |
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