Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory |
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Authors: | Seok Ju Kang Youn Jung Park Insung Bae Kap Jin Kim Ho‐Cheol Kim Siegfried Bauer Edwin L Thomas Cheolmin Park |
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Affiliation: | 1. Department of Materials Science and Engineering, Yonsei University Seoul 120‐749 (Korea);2. College of Environment and Applied Chemistry, Kyung Hee University Yongin‐city, 446‐701 (Korea);3. IBM Almaden Research Center 650 Harry Road, San Jose, CA 95120 (USA);4. Soft Matter Physics Johannes Kepler University Altenberger Strasse 69, 4040 Linz (Austria);5. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139 (USA) |
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Abstract: | Here, a facile route to fabricate thin ferroelectric poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin‐coating and subsequent melt‐quenching is described. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale β‐type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or an organic semi‐conducting channel layer enable fabrication of a highly reliable ferroelectric capacitor and transistor memory unit operating at voltages as low as 15 V. For instance, with a TIPS‐pentacene single crystal as an active semi‐conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I–V hysteresis with a drain current bistability of 103 and data retention time of more than 15 h at ±15 V gate voltage. Furthermore, the robust interfacial homogeneity of the ferroelectric film is highly beneficial for transfer printing in which arrays of metal/ferroelectric/metal micro‐capacitors are developed over a large area with well defined edge sharpness. |
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Keywords: | beta crystals ferroelectrics micro‐capacitors non‐volatile memory organic transistors transfer printing |
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