A General Approach to Semimetallic,Ultra‐High‐Resolution,Electron‐Beam Resists

Commercial electron‐beam resists are modified into semimetallic resists by doping with 1–3 nm metal nanoparticles, which improve the resolution, contrast, strength, dry‐etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron‐beam lithography are readily converted into 5–50 nm, high‐quality multilayers for metallic nanosensors or nanopatterns via ion‐beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.