Fabrication and Optical Characteristics of Position‐Controlled ZnO Nanotubes and ZnO/Zn0.8Mg0.2O Coaxial Nanotube Quantum Structure Arrays |
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Authors: | Jinkyoung Yoo Young Joon Hong Hye Seong Jung Yong‐Jin Kim Chul‐Ho Lee Jeonghui Cho Yong‐Joo Doh Le Si Dang Kyung Ho Park Gyu‐Chul Yi |
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Affiliation: | 1. National Creative Research Initiative Center for Semiconductor Nanorods Department of Materials Science and Engineering POSTECH, Pohang, Gyeongbuk 790784 (Korea);2. Institut Néel, CNRS and Université Joseph Fourier Grenoble 38042 (France);3. Korea Advanced Nanofabrication Center, Suwon Gyeonggi 443‐270 (Korea);4. National Creative Research Initiative Center for Semiconductor Nanorods Department & Physics and Astronomy Seoul National University Seoul 151747(Korea) |
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Abstract: | The position‐controlled growth and structural and optical characteristics of ZnO nanotubes and their coaxial heterostructures are reported. To control both the shape and position of ZnO nanotubes, hole‐patterned SiO2 growth‐mask layers on Si(111) substrates with GaN/AlN intermediate layers using conventional lithography are prepared. ZnO nanotubes are grown only on the hole patterns at 600 °C by catalyst‐free metal–organic vapor‐phase epitaxy. Furthermore, the position‐controlled nanotube growth method allows the fabrication of artificial arrays of ZnO‐based coaxial nanotube single‐quantum‐well structures (SQWs) on Si substrates. In situ heteroepitaxial growth of ZnO and Zn0.8Mg0.2O layers along the circumference of the ZnO nanotube enable an artificial formation of quantum‐well arrays in a designed fashion. The structural and optical characteristics of the ZnO nanotubes and SQW arrays are also investigated using synchrotron radiation X‐ray diffractometry and photoluminescence and cathodoluminescence spectroscopy. |
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Keywords: | arrays metal– organic vapor‐phase epitaxy (MOVPE) nanotubes quantum structure ZnO |
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