| 一种带高阶温度补偿的片内时钟振荡器设计 |
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| 引用本文： | 李扶苏,郭东辉. 一种带高阶温度补偿的片内时钟振荡器设计[J]. 电路与系统学报, 2012, 17(3): 31-36 |
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| 作者姓名： | 李扶苏 郭东辉 |
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| 作者单位： | 厦门大学电子工程系,福建厦门,361005 |
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| 摘 要： | 本文基于0.18μm CMOS工艺,设计了一款适用于片上系统SoC的无需晶振的片内12MHz时钟信号产生电路。利用高阶温度补偿方案,该时钟振荡器能在较宽的温度范围内实现振荡频率的高稳定性。此外,电路的稳压器设计使得振荡器频率在电源电压变化时也能保持相当好的稳定性。仿真结果表明,在-40℃~125℃温度范围内,此振荡器振荡频率的温度系数仅为40ppm/℃,电源电压变化±10%时,振荡频率的相对误差仅为±0.012%,完全能够满足常规数字系统的要求。
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| 关 键 词： | CMOS 环形振荡器 无晶振 高阶温度补偿 |
Fully on-chip clock oscillator with higher-order temperature compensation |
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| LI Fu-su , GUO Dong-hui. Fully on-chip clock oscillator with higher-order temperature compensation[J]. Journal of Circuits and Systems, 2012, 17(3): 31-36 |
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| Authors: | LI Fu-su GUO Dong-hui |
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| Affiliation: | (Department of Electronic Engineer,Xiamen University,Xiamen 361005,China) |
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| Abstract: | A 12MHz clock oscillator without crystal suitable for SoC is designed in this paper in 0.18μm CMOS process.It gets high stability by means of higher-order temperature compensation/regulator in the wide temperature range/voltage range.The simulation results show that the temperature coefficient is just 40ppm/℃ across a temperature range of-40℃~125℃ and the relative error is ±0.012% for a supply voltage range of 3V~3.6V. |
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| Keywords: | CMOS ring oscillator crystal-free higher-order temperature compensation |
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