皮秒和纳秒脉冲激光作用于半导体材料的加热机理研究

从半导体材料的吸收机制出发，分析研究了激光能量在半导体材料中的传输过程，并采用双温模型分别模拟计算了在人射激光能量相同的情况下，皮秒和纳秒激光脉冲作用于硅半导体材料的加热过程，结果表明在纳秒脉冲作用下，可以忽略载流子效应，用单纯的单温热传导方程来模拟。而在皮秒脉冲作用下，应该考虑载流子效应，采用包括晶格温度和载流子温度的双温模型来模拟硅半导体材料的加热过程。

Study of the Heating Mechanism of a Semiconductor Irradiated by Picosecond and Nanosecond Laser Pulses

Based on the absorption mechanism of the semiconductor, the laser energytrandtiOn process in the semiconductor has been studied and a double-temperature model hasbeen adopted to calculate the heating process in silicon irradiated by picosecond andnano6eCond laser pulses respectively with the same energy density. A conclusion can beendrawn ftom the calculated results that the carrier effect can be neglected and the heatingprocess can be simulated through a single thermal conduction in the case of nanosecond pulselaser irradiation while the carrier effect must be take into consideration and a double-temperature model can be adopted in the case of picosecond pulsed laser irradiation.