Optimization of technology of growing GaN heterostructures with using diffractometry analysis |
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| Authors: | I. G. Ermoshin I. N. Tsyplenkov Yu. N. Sveshnikov |
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| Affiliation: | (1) Department of Physics, Kansas State University , Manhattan, KS 66506-2601, USA , |
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| Abstract: | The procedure of optimization of growing the layers of III-N nitrides by the MOCVD technique using X-ray-diffraction analysis is considered. It is established that the structural perfection of the layers estimated from the measurement of rocking curves correlates with radiation characteristics of structures of light-emitting diodes (LED). |
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