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Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge |
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| Authors: | V. S. Avrutin Yu. A. Agafonov A. F. Vyatkin V. I. Zinenko N. F. Izyumskaya D. V. Irzhak D. V. Roshchupkin É. A. Steinman V. I. Vdovin T. G. Yugova |
| Affiliation: | (1) Institute of Microelectronic Technology, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(2) Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(3) Institute for Chemical Problems in Microelectronics, Moscow, 117571, Russia;(4) State Research Institute for the Rare-Metals Industry, Moscow, 119017, Russia |
| Abstract: | Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400°C so that the peak of the ions’ energy losses was located within the silicon substrate (deeper than the SiGe-Si interface). The effect of ion implantation on the relaxation of elastic stresses and the defect structure formed as a result of postimplantation annealing is studied. It is found that annealing at a temperature even as low as 600°C makes it possible to ensure a very high degree of relaxation of elastic stresses in the heterostructure and a comparatively low density of threading dislocations in the SiGe layer (<105 cm?2). The results obtained make it possible to suggest a method for the formation of thin SiGe/Si layers that feature a high degree of relaxation, low density of threading dislocations, and a good surface morphology. |
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