| X波段GaN收发前端芯片设计 |
| |
| 引用本文： | 刘福海,鲁丽丽,陈南庭.X波段GaN收发前端芯片设计[J].电子测试,2017(10). |
| |
| 作者姓名： | 刘福海 鲁丽丽 陈南庭 |
| |
| 作者单位： | 中国电子科技集团公司第十三研究所,河北石家庄,050051 |
| |
| 摘 要： | 本文设计了一款基于0.25 um氮化镓PHEMT工艺的8.5-10.5GHz MMIC收发前端芯片,该收发前端由一个功率放大器和一个单刀双掷开关组成.经仿真优化后,在工艺线上进行了流片,并载片测试了其性能参数.测试结果显示,发射路的功率放大器饱和输出功率大于33dBm,功率附加效率39%.接收路开关插入损耗0.6dB,开关隔离度大于37dB.
|
| 关 键 词： | 前端芯片 测试 |
Design of X band GaN transceiver front-end chip |
| |
| Liu Fuhai,Lu Lili,Chen Nanting.Design of X band GaN transceiver front-end chip[J].Electronic Test,2017(10). |
| |
| Authors: | Liu Fuhai Lu Lili Chen Nanting |
| |
| Abstract: | This paper introduces a 8.5-10.5GHz MMIC transceiver front end chip based on 0.25 um gallium PHEMT process, which consists of a power amplifier and a single pole double throw switch.The optimized chip is verified by simulation and tapeout on the process line,the performance parameters are tested.Test results show that the power amplifier saturation output power is greater than 33dBm, power additional efficiency 39%. SPDT switch achieve low input loss 0.6dB, switch isolation greater than 37dB. |
| |
| Keywords: | front end chip test |
| 本文献已被 万方数据 等数据库收录！ |
|
