Organic Light‐Emitting Diodes with Field‐Effect‐Assisted Electron Transport Based on α‐bi;,ω‐bi;‐Diperfluorohexyl‐quaterthiophene |
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| Authors: | Sarah Schols Christina McClatchey Cédric Rolin Dieter Bode Jan Genoe Paul Heremans Antonio Facchetti |
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| Affiliation: | 1. IMEC v.z.w. – SOLO/PME Kapeldreef 75, 3001 Leuven (Belgium);2. Electrical Engineering Department Katholieke Universiteit Leuven 3001 Leuven (Belgium);3. FWO Vlaanderen Egmontstraat 5 1000 Brussels (Belgium);4. School of Maths & Physics, Queens University Belfast Belfast BT7 1NN (Northern Ireland);5. Polyera Corporation 8025 Lamon Avenue Skokie, IL 60077 (USA) |
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| Abstract: | Materials commonly used in the carrier transport layers of organic light‐emitting diodes, where transport occurs through the bulk, are in general very different from materials used in organic field‐effect transistors, where transport takes place in a very thin accumulation channel. In this paper, the use of a high‐performance electron‐conducting field‐effect transistor material, diperfluorohexyl‐substituted quaterthiophene (DFH‐4T), as the electron‐transporting material in an organic light‐emitting diode structure is investigated. The organic light‐emitting diode has an electron accumulation layer in DFH‐4T at the organic hetero‐interface with the host of the light‐emitting layer, tris(8‐hydroxyquinoline) aluminum (Alq3). This electron accumulation layer is used to transport electrons and inject them into the active emissive host‐guest layer. By optimizing the growth conditions of DFH‐4T for electron transport at the organic hetero‐interface, high electron current densities of 750 A cm?2 are achieved in this innovative light‐emitting structure. |
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