| 不同温度下半导体硅势垒的正向I-V特性曲线的汇聚特性 |
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| 引用本文： | 苗庆海,卢烁今,张兴华,宗福建,朱阳军. 不同温度下半导体硅势垒的正向I-V特性曲线的汇聚特性[J]. 半导体学报, 2008, 29(4): 663-667 |
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| 作者姓名： | 苗庆海 卢烁今 张兴华 宗福建 朱阳军 |
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| 作者单位： | 山东大学物理与微电子学院,济南250100 |
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| 摘 要： | 以正向电压为自变量,以正向电流的对数为应变量,以温度为参数得到的p-n结的I-V-(T)特性曲线在第一象限中近似汇聚于一点.汇聚点对应的电压近似等于半导体材料的禁带宽度.汇聚点可以用来获取任意温度下的I-V特性曲线.
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| 关 键 词： | 半导体势垒 禁带宽度 汇聚点 正向I-V特性曲线 semiconductor barrier bandgap convergent point forward I-V characteristic curves |
| 文章编号： | 0253-4177(2008)04-0663-05 |
| 收稿时间： | 2007-06-29 |
| 修稿时间： | 2007-12-02 |
The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures |
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| Miao Qinghai,Lu Shuojin,Zhang Xinghu,Zong Fujian and Zhu Yangjun. The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures[J]. Chinese Journal of Semiconductors, 2008, 29(4): 663-667 |
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| Authors: | Miao Qinghai Lu Shuojin Zhang Xinghu Zong Fujian Zhu Yangjun |
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| Affiliation: | School of Physics and Microelectronics,Shandong University,Jinan 250100,China;School of Physics and Microelectronics,Shandong University,Jinan 250100,China;School of Physics and Microelectronics,Shandong University,Jinan 250100,China;School of Physics and Microelectronics,Shandong University,Jinan 250100,China;School of Physics and Microelectronics,Shandong University,Jinan 250100,China |
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| Abstract: | The I-V-(T) characteristic curves of p-n junctions with the forward voltage as the independent variable,the logarithm of forward current as the dependent variable,and the junction temperature as the parameter,almost converge at one point in the first quadrant.The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material.This convergence point can be used to obtain the I-V characteristic curve at any temperature. |
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| Keywords: | semiconductor barrier bandgap convergent point forward I-V characteristic curves |
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