| Abstract: | An indium e zinc-oxide(IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular Si O2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of w14 cm2V1s1 and a low subthreshold swing of w80 m V/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular Si O2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and shortterm depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices. |
