| BaTiO_3半导瓷PTC现象的机理研究进展 |
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| 引用本文： | 祝炳和.BaTiO_3半导瓷PTC现象的机理研究进展[J].电子元件与材料,2003,22(11):21-27,30. |
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| 作者姓名： | 祝炳和 |
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| 作者单位： | 中国科学院上海硅酸盐研究所,上海,200050 |
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| 摘 要： | 综述了近年来PTC机理研究的进展。着重讨论以下几点:Heywang 及Jonker模型;单个晶界电性测定;用阻抗分析区分晶界及晶粒电阻;应力与PTC效应;晶界结构与PTC效应;晶界第二相、晶界层与PTC效应;化学吸附气体作为电子陷阱。最后讨论了今后还需进一步研究的方面。
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| 关 键 词： | 钛酸钡 PTC现象 晶界 畴结构 |
| 文章编号： | 1001-2028(2003)11-0021-07 |
Recent Progress in Research on PTC Phenomena |
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| ZHU Bing-he.Recent Progress in Research on PTC Phenomena[J].Electronic Components & Materials,2003,22(11):21-27,30. |
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| Authors: | ZHU Bing-he |
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| Abstract: | Over the past 45 years, the advance in the research on PTC mechanism is reviewed. Discussed are Heywang and Jonker model; measurement electrical property of single grain boundary; specification of grain resistivity and grain boundary resistivity by impedance analysis; stress and PTC effect, grain boundary structure and PTC effect; secondary phase of grain boundary; grain boundary layer and PTC effect; chemisorption gases as electron traps. Further research on PTC mechanism is also discussed. |
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| Keywords: | BaTiO3 PTC phenomena grain boundary domain structure |
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