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High-resolution electron microscopy of Zn- and Bi-related superlattices in ion implanted (1 0 0) Si |
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| Authors: | G. Zollo G. Vitali M. Kalitzova D. Manno |
| Affiliation: | 1. Department of Energetica, University “La Sapienza” and INFM, via A. Scarpa 14–, 16 00161, Rome, Italy 2. Bulgarian Academy of Sciences, Institute of Solid State Physics, Tzarigradsko Chaussee 72, 1784, Sofia, Bulgaria 3. Dipartimento di Scienza dei Materiali, University of Lecce, via per Arnesano, Lecce, 73100, Italy |
| Abstract: | Nanosized precipitation in high-dose Zn+- and Bi+-implanted Si is investigated by high-resolution transmission electron microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results in the precipitation of nanosized metallic inclusions revealed as superlattices composed of the host Si matrix and the implanted species. |
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