| Effects of heat treatment process on thin film alloy resistance and its stability |
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| 作者姓名： | ZHOU Ji-cheng |
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| 作者单位： | Institute for Information Materials and Computational Science，Central South University，Institute for Information Materials and Computational Science，Central South University Changsha 410083，China，Changsha 410083，China |
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| 基金项目： | TheNationalNaturalScienceFoundationofChina(No .699710 0 7)，TheExcellentYoungTeachersProgramofMOE ,China(No .69890 2 2 7) |
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| 摘 要： | 1 INTRODUCTIONSensortechnologyisveryimportantininforma tionacquisitionandprocessingtechniquefields ,fromcosmicexplorationtooceanicexploitation ,andfromproductioncontrollingtomodernizedlife .Sensors ,withgreatprospect ,havebeencomprehensivelyap pliedinmanyfields ,suchasindustry ,agriculture ,nationaldefenseandsoon .Almosteverynationat tachesmuchimportancetothedevelopmentofsensortechnology ,andJapanlistsitasoneofthesixkeytechnologies1] .Sensortechnologyisalsolistedas“theNinthFive” ,“t…
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| 收稿时间： | 29 October 2002 |
Effects of heat treatment process on thin film alloy resistance and its stability |
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| Zhou Ji-cheng,and Peng Yin-qiao.Effects of heat treatment process on thin film alloy resistance and its stability[J].Journal of Central South University of Technology,2003,10(2):91-93. |
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| Authors: | Zhou Ji-cheng and Peng Yin-qiao |
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| Affiliation: | (1) Institute for Information Materials and Computational Science, Central South University, 410083 Changsha, China |
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| Abstract: | Alloy thin film for advanced pressure sensors was manufactured by means of ion-beam sputtering SiO_2 insulation film and NiCr thin film on the 17-4PH stainless steel elastic substrate. The thin film resistance was respectively heat-treated by four processes. The effects on stability of thin film alloy resistance were investigated, and paramaters of heat treatment that make thin film resistance stable were obtained. The experimental result indicates that the most stable thin film resistance can be obtained when it is heat-treated under protection of SiO_2 and N_2 at 673 K for 1 h, and then kept at 473 K for 24 h. Pressure sensor chips of high precision for harsh environments can be manufactured by this process. |
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| Keywords: | thin film alloy resistance heat treatment stability pressure sensors |
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