Microstructure and domain configurations in ferroelectric PbTiO3 and Pb(Zr,Ti)O3 thin fims |
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Authors: | Jane G. Zhu M. M. Al-Jassim Maria Huffman |
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Affiliation: | (1) National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO;(2) Symetrix Corporation, 5055 Mark Dabling Blvd, 80918 Colorado Springs, CO;(3) Present address: Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, 37831-6057 Oak Ridge, TN |
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Abstract: | Ferroelectric domain configurations in PbTiO3 and Pb(ZrxT1−x)O3 (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO3 and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed. |
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Keywords: | Domain configurations ferroelectric PbTiO3 Pb(Zr,Ti)O3 thin films |
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