| 用电诱导液相外延法制备铝组分稳定的高铝值镓铝砷外延层 |
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| 引用本文： | 曾庆科.用电诱导液相外延法制备铝组分稳定的高铝值镓铝砷外延层[J].材料科学与工程学报,1995(3). |
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| 作者姓名： | 曾庆科 |
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| 作者单位： | 广西师范大学 |
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| 摘 要： | 本文对用于制造高效率半导体发光器件的材料──Ｇａ_（１－ｘ）Ａｌ_ｘＡｓ（ｘ＝０．７５）外延层沿生长方向上铝组分的分布进行了详细地讨论。采用电液相外延法能获得铝组分高度稳定的Ｇａ_（１－ｘ）Ａｌ_ｘＡｓ外延层，并用电流诱导效应作了初步理论解释。
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| 关 键 词： | 电诱导液相外延，外延层，高效发光管，镓铝砷 |
Preparation of Ga_(1-x)Al_xAs Epitaxial Layer of Steady Al Component By Current-controlled Liquid Phase Epitaxy |
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| Zeng Qingke.Preparation of Ga_(1-x)Al_xAs Epitaxial Layer of Steady Al Component By Current-controlled Liquid Phase Epitaxy[J].Journal of Materials Science and Engineering,1995(3). |
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| Authors: | Zeng Qingke |
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| Affiliation: | Guangxi Normal University |
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| Abstract: | The epitazial Ga_(1-x)Al_xAs layer of the high x values (x=0.75)is a very important material of high efficient LED. In this paper, the method of current-controlled liquid phase epitaxial growth (CLPE) has been employed for the first time to grow this Ga_(1-x)Al_xAs (x=0.75) on n-GaAs substrate and studied Al component distribution in Ga_(1-x)Al_xAs epitaxial layer along epitaxial growth direction in detail. The Al component in Ga_(1-x)AlxAs epitaxial layer was obtained high steadily by CLPE and explained the experimental results by currentcontrolled effect. |
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| Keywords: | CLPE Epitaxial layer High efficient LED Ga_(1-x)Al_xAs |
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