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Switching devices in sol-gel hybrid thin film technology |
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| Authors: | A. Dima M. Dima G. Dearden C.J. Williams M. Gagliardi F.G. Della Corte |
| Affiliation: | a Laser Group, Department of Engineering, University of Liverpool, Brownlow Hill L69 3GH Liverpool, UK b Institute for Physics and Nuclear Engineering, Str. Atomistilor 407, P.O. Box MG-6, R-76900 Bucharest, Romania c Institute for Microelectronics and Microsystems, Via P. Castellino 111, I-80131 Napoli, Italy d DIMET-Mediterranea University of Reggio Calabria Via Graziella, 89060 Reggio Calabria, Italy |
| Abstract: | Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO2-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current-voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective. |
| Keywords: | Hybrid Films Sol-gel deposition Rose Bengal Atomic force microscopy |
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