Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering |
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Authors: | Ho-Kyun Park Yong-Seok Park Woon-Jo Cho |
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Affiliation: | a Department of Display Materials Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Gyeonggi-do, 446-701, South Korea b Nano Device Research Center, Korea Institute of Science and Technology, 39-1, Haweolgok-Dong, Seongbuk-Gu, Seoul, Korea, 136-791 |
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Abstract: | We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77 × 10− 4 Ω cm, high transparency of ~ 87% and figure of merit value of 21.2 × 10− 3Ω− 1, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination. |
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Keywords: | Indium zinc tin oxide Radio-frequency magnetron sputtering Resistivity Transparent conducting oxide Organic light emitting diodes X-ray diffraction Scanning electron microscopy Transmission electron microscopy |
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