Preparation of TiSi nanowires by APCVD used for improving dielectric properties of PST thin film

Nanoelectrode of conductive TiSi nanowires with Ti₅Si₃ conductive bottom layer underneath is prepared on glass substrate by atmosphere pressure chemical vapor deposition (APCVD) method. Pb_0.4Sr_0.6 (Ti_0.97 Mg_0.03) O_2.97 (PST) thin film is deposited on the nanoelectrode by rf-sputtering method. The morphology and phase structure of the nanoelectrode are measured by FE-SEM and XRD, respectively. The dielectric property of a PST thin film deposited on the nanoelectrode substrate is obtained by Agilent 4294A Impedance Analyzer. The results show that the conductive Ti₅Si₃ crystalline phase bottom layer is formed at deposition temperature above 710 °C, and the conductive TiSi single crystal nanowires are formed on the bottom layer perfectly in this case. By using the substrate on which the TiSi nanowire planted Ti₅Si₃ electrode is prepared, the PST thin film is deposited and it exhibits the high tunability of approximately 61% which is much higher than that deposited on the Ti₅Si₃ coated glass substrates without TiSi nanowires.