Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures |
| |
Authors: | A S Benediktov N A Shelepin P V Ignatov |
| |
Affiliation: | 1.Molecular Electronics Research Institute (MERI),Zelenograd, Moscow,Russia |
| |
Abstract: | In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from ?60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |