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High-speed 1 ?m GaAs m.e.s.f.e.t. |
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| Authors: | Kohn E. Wüller R. Stahlmann R. Beneking H. |
| Affiliation: | RWTH Aachen, Institut für Halbleitertechnik, Aachen, West Germany; |
| Abstract: | By minimising parasitic series resistances, a GaAs m.e.s.f.e.t. with 1 ?m gate length was fabricated, possessing the highest known r.f. power gain, measured up to 18 GHz, for GaAs m.e.s.f.e.t.s. |
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