| 金属掺杂对In2O3薄膜光学性质的影响 |
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| 引用本文： | 王军华. 金属掺杂对In2O3薄膜光学性质的影响[J]. 中国材料科技与设备, 2006, 3(1): 97-97,105 |
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| 作者姓名： | 王军华 |
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| 作者单位： | 潍坊学院教育科学与技术系,山东潍坊261061 |
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| 基金项目： | 潍坊学院自然科学基金资助项目（2004205） |
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| 摘 要： | 研究了射频溅射法制备的金属／半导体类型颗粒膜的光学特性。通过样品透射谱分析，发现金属Fe的掺杂使半导体In2O3的带间跌迁由直接跃迁变为间接跃迁；随Fe所占体积份数的增加，局域态尾变宽，带隙变窄。这是由于掺入Fe颗粒后。母体材料与金属颗粒的界面处表面态增多，以及母体材料的非晶化引起的。
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| 关 键 词： | 颗粒膜 直接跌迁 间接跃迁 局域态 |
Effect on Optical Properties of In2O3 Films by Metal Doping |
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| WANG Jun - hua. Effect on Optical Properties of In2O3 Films by Metal Doping[J]. Chinese Materials Science Technology & Equipment, 2006, 3(1): 97-97,105 |
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| Authors: | WANG Jun - hua |
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| Affiliation: | Department of Educational Science and Technology, Weifang University, Shandong, Weifang, 261061, China |
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| Abstract: | The optical properties of metal/semiconductor granular films prepared by the radio frequency sputtering have been investigated. The measurement results of transmittance spectra show that In2O3 is a kind of semiconductor material with direct transition band gap, but the band to band transition for Fe doped In2O3 granular films can be attributed to indirect transition. With increasing the content of Fe, the band gap of Fe doped granular films decreases and the tail width of localized state becomes wider, which can be attributed to the increase of the surface area as well as the non - crystallization of the In2O3 matrix as increasing Fe volume concentration. |
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| Keywords: | Granular film Direct transition Indirect transition Localized state |
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