Negative differential resistance of GaAs/Al/sub x/Ga/sub 1-x/As multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator |
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| Authors: | Goswami S Davis L Hong S Singh J Bhattacharya PK Haddad GI |
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| Affiliation: | Michigan Univ., Ann Arbor, MI, USA; |
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| Abstract: | A study is presented of the photocurrent behaviour of p-i-n diodes having GaAs/Al/sub x/Ga/sub 1-x/As MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.1> |
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