| 低温多晶硅发射极晶体管电流增益模型和模拟 |
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| 引用本文： | 黄流兴, 魏同立, 郑茳, 曹俊诚. 低温多晶硅发射极晶体管电流增益模型和模拟[J]. 电子与信息学报, 1994, 16(2): 207-211. |
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| 作者姓名： | 黄流兴 魏同立 郑茳 曹俊诚 |
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| 作者单位： | 东南大学微电子中心低温器件实验室，东南大学微电子中心低温器件实验室，东南大学微电子中心低温器件实验室，东南大学微电子中心低温器件实验室 南京 210018，南京 210018，南京 210018，南京 210018 |
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| 摘 要： | 本文考虑禁带变窄效应、载流子冻析效应和多晶硅/单晶硅界面复合与氧化层隧穿效应,采用有效复合速度方法,建立了多晶硅发射极晶体管电流增益的温度关系模型。模拟计算结果与实验符合较好。
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| 关 键 词： | 双极晶体管 多晶硅发射极 电流增益 低温 |
| 收稿时间： | 1993-01-06 |
| 修稿时间： | 1993-05-11 |
MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR |
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| Huang Liuxing, Wei Tongli, Zheng Jiang, Cao Juncheng. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1994, 16(2): 207-211. |
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| Authors: | Huang Liuxing Wei Tongli Zheng Jiang Cao Juncheng |
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| Affiliation: | Microelectronics Center, Southeast University, Nanjing 210018 |
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| Abstract: | A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data. |
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| Keywords: | Bipolar transistor Polysilicon emitter Current gain Low temperature |
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