A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices

We present a two-dimensional electron gas (2DEG) charge-control mobility variation based drain current model for sheet carrier density in the channel. The model was developed for the AlInGaN/AlN/GaN high-electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels E_f and n_s along with mobility for various Al and In molefractions. This physics based ns model fully depends upon the variation of E_f,u0, the first subband E₀, the second subband E₁, and n_s. We present a physics based analytical drain current model using n_s with the minimum set of parameters. The analytical results obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.