| 基于SiGe BiCMOS技术的低功耗23G VCO |
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| 引用本文： | 黄银坤,吴旦昱,周磊,江帆,武锦,金智. 基于SiGe BiCMOS技术的低功耗23G VCO[J]. 半导体学报, 2013, 34(4): 045003-4 |
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| 作者姓名： | 黄银坤 吴旦昱 周磊 江帆 武锦 金智 |
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| 作者单位： | Institute of Microelectronics,Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences |
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| 基金项目： | Project supported by the State Key Development Program for Basic Research of China(No.2010CB327502) |
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| 摘 要： | A 23 GHz voltage controlled oscillator(VCO) with very low power consumption is presented.This paper presents the design and measurement of an integrated millimeter wave VCO.This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator.The VCO RFIC was implemented in a 0.18μm 120 GHz f_t SiGe hetero-junction bipolar transistor(HBT) BiCMOS technology.The VCO oscillation frequency is around 23 GHz,targeting at the ultra wideband(UWB) and short range radar applications.The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset.The FOM of the VCO is -177 dBc/Hz.
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| 关 键 词： | VCO low power SiGe BiCMOS |
| 收稿时间： | 2012-08-28 |
A 23 GHz low power VCO in SiGe BiCMOS technology |
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| Huang Yinkun,Wu Danyu,Zhou Lei,Jiang Fan,Wu Jin and Jin Zhi. A 23 GHz low power VCO in SiGe BiCMOS technology[J]. Chinese Journal of Semiconductors, 2013, 34(4): 045003-4 |
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| Authors: | Huang Yinkun Wu Danyu Zhou Lei Jiang Fan Wu Jin Jin Zhi |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | |
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| Keywords: | VCO low power SiGe BiCMOS |
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