| 降低SU-8光刻胶侧壁粗糙度的研究 |
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| 引用本文： | 张晔,陈迪,李建华,靖向萌,倪智萍,朱军.降低SU-8光刻胶侧壁粗糙度的研究[J].压电与声光,2007,29(1):118-121. |
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| 作者姓名： | 张晔 陈迪 李建华 靖向萌 倪智萍 朱军 |
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| 作者单位： | 上海交通大学,微纳科学技术研究院,微米/纳米加工技术国家重点实验室,上海,200030 |
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| 摘 要： | SU-8负性光刻胶可通过UV-LIGA技术得到高深宽比微结构,是微机械系统(MEMS)制造中极具前景的一种技术。目前已有对于SU-8微结构的线宽变化,侧壁倾角,表面粗糙度,增加深宽比等方面的大量研究,但是鲜有对于SU-8微结构侧壁粗糙度的研究。该文从造成微结构侧壁粗糙度的原因入手,讨论了各个工艺参数对侧壁粗糙度的影响,并且通过优化工艺参数达到了降低SU-8微结构侧壁粗糙度的目的。
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| 关 键 词： | 侧壁粗糙度 |
| 文章编号： | 1004-2474(2007)01-0118-04 |
| 修稿时间： | 2005-10-20 |
Research of Reducing Sidewall Roughness of SU-8 Microstructures |
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| ZHANG Ye,CHEN Di,LI Jian-hua,JING Xiang-meng,NI Zhi-ping,ZHU Jun.Research of Reducing Sidewall Roughness of SU-8 Microstructures[J].Piezoelectrics & Acoustooptics,2007,29(1):118-121. |
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| Authors: | ZHANG Ye CHEN Di LI Jian-hua JING Xiang-meng NI Zhi-ping ZHU Jun |
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| Affiliation: | State Key Lab. of Micro/Nano Fabrication Technology, Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030,China |
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| Abstract: | UV-LIGA technology based on SU-8 negative photoresist has become a promising technology to fabricate high aspect ratio microstructures.A lot of work has been done to improve SU-8 microstructures through controlling the surface dimension,eliminating the T-top,reducing the surface roughness and increasing the aspect ratio,but few studies have been done to improve the sidewall roughness of SU-8 microstructures.In this paper,we discussed the effects of the process parameter on of the sidewall roughness formation,and reduced the roughness by optimization of process parameters. |
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| Keywords: | UV-LIGA SU-8 |
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