Creep mechanisms in beryllium |
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Authors: | Donald Webster and Donald D Crooks |
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Affiliation: | (1) Lockheed Palo Alto Research Laboratory, 94304 Palo Alto, CA |
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Abstract: | Observations of beryllium samples which have been creep tested between 922 K and 1422 K indicate that creep behavior is controlled
by the relative strengths of the grain boundaries and the matrix. Since creep deformation can occur predominantly by grain
boundary sliding or entirely by deformation within the grains, the creep strength was found to be controlled by the weaker
of the two features. Low melting phases containing aluminum and silicon which formed along the grain boundaries acted as stress
concentrations which favored localized grain boundary deformation, and recrystallization. Creep resistance was found to drop
markedly when the BeO content was reduced substantially below 1 pct. |
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